RF GaN Technology Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2023

RF GaN Technology Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2023

  • Transparency Market Research
  • Ongoing
  • ICT

Report Description

Gallium nitride (GaN) is bandgap semiconductor (binary III-V direct) normally used in light emitting diodes. It has wide-band gap of 3.4 electron volts (eV). GaN offers high electron mobility, very high breakdown voltages, and saturation velocity.  It is ideal for high-temperature and high-power microwave applications such as high-voltage switching devices for power grids and RF power amplifiers at microwave frequencies. GaN materials have high breakdown field, which permits the GaN device to function at higher voltages compared to other semiconductor devices. 

GaN technology offers several advantages including higher operating temperature, higher operating voltage, higher power density, crack-resistant, and durable material among others. GaN are now finding widespread applications in commercial sectors. GaN is now used for low-frequency L, C and S-band RF applications including power management and cable TV. Currently, solution that employs GaN-based RF transistors is replacing the magnetrons used in microwave ovens. GaN-based devices were affordable only for military applications including high security communications systems, radar and development of electronic warfare. However, improvements in yield and material, lower-cost substrates and expansion of wafers have reduced costs of GaN-based devices. Some of the companies that use GaN technology are Avago, Cree, RF Micro Devices, Efficient Power Conversion (EPC) and Toshiba Corporation.

GaN is comparatively new technology compared to other semiconductors including GaAs and Si. It has become preferred technology for high RF, and applications that requires high end power levels (such as base transceiver stations, radar, satellite electronic warfare and communications) and high power to transmit signals over long distances. It offers special properties for applications in high- high-frequency and power devices and optoelectronics.

GaN technology primarily focuses on millimeter-wave power and microwave amplifiers. Individual amplifiers can attain power levels upto tens of watts. In other parallel or push, pull or Doherty configurations, power levels of 100 to 1000 watts can be achieved using GaN technology. GaN technology is widely used in military applications associated with satellite power amplifier and phased array radar modules. GaN power amplifiers are now finding their use in cellular base station. GaN semiconductor industry involves several players such as raw material vendors, fabless and IP vendors, EDA and design tool vendors, foundry suppliers, fab vendors, integrated devices manufacturers, original devices manufacturers, original equipment manufacturers, assembly, testing, and packaging players and wafer equipment manufacturers among others.

GaN-on-SiC approach use superior thermal conductivity and low RF losses of SiC and high power density of GaN material. This combination offers poorer thermal performance and higher RF losses. However, GaN-on-SiC is a cost-effective approach and used in price-sensitive power electronics applications. The requirement for high power in the very high frequency (VHF), microwave and ultra high frequency (UHF) bands has led to development of transistors that can supply 10 to 100 watts at radio frequencies to 10 GHz. These devices are manufactured using GaN materials. RF semiconductor devices market requires devices to handle different specifications at affordable price. GaN material with higher power, better linearity, more frequency bands and improved efficiency are driving current developments in the RF semiconductor devices market.

Some of the major players in RF GaN technology market include Fujitsu Ltd., WIN Semiconductors, GaN Systems Inc., NGK Insulators, Freescale Semiconductors Incorporated, Sumitomo Electric Devices Innovation, Covalent Materials,International Rectifier Corporation, Suzhou Jiangzhan Semiconductor,and RF Micro Devices Inc among others.

This research report analyzes this market on the basis of its market segments, major geographies, and current market trends. Geographies analyzed under this research report include 

  • North America 
  • Asia Pacific 
  • Europe
  • Middle East and Africa
  • Latin America

This report provides comprehensive analysis of 

  • Market growth drivers 
  • Factors limiting market growth
  • Current market trends 
  • Market structure
  • Market projections for upcoming years 

This report is a complete study of current trends in the market, industry growth drivers, and restraints. It provides market projections for the coming years. It includes analysis of recent developments in technology, Porter’s five force model analysis and detailed profiles of top industry players. The report also includes a review of micro and macro factors essential for the existing market players and new entrants along with detailed value chain analysis. 

Reasons for Buying this Report

  • This report provides pin-point analysis for changing competitive dynamics
  • It provides a forward looking perspective on different factors driving or restraining market growth 
  • It provides a six-year forecast assessed on the basis of how the market is predicted to grow 
  • It helps in understanding the key product segments and their future
  • It provides pin point analysis of changing competition dynamics and keeps you ahead of competitors
  • It helps in making informed business decisions by having complete insights of market and by making in-depth analysis of market segments 
  • It provides distinctive graphics and exemplified SWOT analysis of major market segments 


Note : All statements of fact, opinion, or analysis expressed in reports are those of the respective analysts. They do not necessarily reflect formal positions or views of Transparency Market Research.

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