Published on : May 03, 2017
Albany, New York, May 03, 2017: The report presents a comprehensive view of the global next-generation memory market to readers, which makes it a must-have accessory for interested parties in the market. New developments in the dynamic next-generation memory market are studied in detail to present an accurate view of the contemporary condition of the market. The leading geographical segments of the global next-generation memory market are profiled in the report in order to present an overview of how the next-generation memory operates across the world. The leading players in the global next-generation memory market are also assessed in the report. The report is titled “Global Next Generation Memory Market 2017-2021”.
According to the report, the global next-generation memory market is expected to exhibit a stunning 66.63% CAGR between 2017 and 2021. This is largely due to the computing boom in recent years and the rising need for big data analytics and the consequently increasing importance of high-density server memory. The dynamic nature of the modern consumer electronics industry is also likely to be a major driver for the global next-generation memory market.
Next-generation memory, which includes technologies such as FeRAM (ferroelectric random access memory), PCM (phase change memory), MRAM (magnetic random access memory), ReRAM (resistive random access memory), has become the need of the time due to the rising volume of data being generated across the world. Next-generation memory technologies primarily present the advantage of high storage density, which is becoming the key asset in the memory market due to the physical constraints on the size of conventional memory devices.
The report segments the global next-generation memory market by application and geography in order to provide readers with a granular view of the market. By application, the automotive and industrial sectors, cellphones, enterprise storage, mass storage, and smartcards and embedded MCUs are the leading segments of the next-generation memory market.
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Of these, the automotive industry is likely to remain crucial for the next-generation memory market in the coming years thanks to the rapid advances in automotive computing. Even the most basic cars now feature a wide variety of electronics and the trend is definitely on the way up, with the trickle-down economics of the automotive industry working brilliantly thanks to the constant innovation by industry leaders such as Mercedes, BMW, and Volkswagen. This is likely to remain a key driver for the global next-generation memory market in the coming years, as providing sufficient memory in compact cars presents an even bigger problem than in computing institutions.
Geographically, the report divides the global next-generation memory market into the Americas, Asia Pacific, and Europe, the Middle East, and Africa (EMEA). Due to the strong presence of automotive industry leaders such as Ford, Mercedes, and Volkswagen, the U.S. and Central Europe are likely to remain the key markets for next-generation memory technology in the coming years. These regions are also home to some of the world’s largest technology companies, further ensuring their status as the dominant geographical segments of the global next-generation memory market. Nonetheless, the rising purchasing power of consumers in Asia Pacific countries is likely to boost the demand for advanced next-generation memory technology from the region in the coming years.
The report also looks into the competitive dynamics of the global next-generation memory market by profiling the leading companies operating in it. Key next-generation memory market players examined in the report include Fujitsu, Intel, Micron Technology, IBM, Cypress Semiconductor, Samsung Electronics, and Toshiba.
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