Published on : Sep 28, 2016
ALBANY, New York, September 28, 2016: ResearchMoz.us has announced the addition of a new report on the global ferroelectric RAM market to its vast repository of market intelligence. The report examines the historical growth path of the ferroelectric RAM market and presents a detailed overview of the factors having a determinant impact on the trajectory of the market. The report, titled ‘Global Ferroelectric RAM Market 2016-2020,’ is available for sale on the official website of ResearchMoz.us.
Ferroelectric RAM is gaining popularity as a promising alternative to flash memory due to its lower power needs and faster writing performance than flash memory. The maximum read/write endurance of ferroelectric RAM is also much higher than that of flash memory, which is an important advantage held by ferroelectric RAM in times when the long-term storage of data is becoming a vital factor in business dynamics.
Despite shortcomings such as having a lower total data storage capacity and storage density than flash memory, the global market for ferroelectric RAM has made healthy progress in the last decade and is likely to experience widespread demand as a strong alternative to flash memory. According to the report, the global market for ferroelectric RAM is expected to exhibit a steady CAGR of 6.40% from 2016 to 2020.
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The use of ferroelectric RAM in microsystems is a crucial driver for the global market due to the increasing adoption of smart cards. Credit and debit cards are already common in the developed world and are rising in demand rapidly in developing countries. Smart cards are now being used for much more than cashless money transfers and, considering the increasing number of applications, are likely to remain vital for the ferroelectric RAM market in the coming years.
The booming automotive industry is another key driver for the global ferroelectric RAM market. Due to its low power requirements, ferroelectric RAM is becoming increasingly common in vehicular monitoring and processing systems. This use of ferroelectric RAM has been propelled by the increasing demand for vehicles incorporating the latest technological advances, which has necessitated the development of sophisticated vehicle management systems. The promising growth prospects of the automotive industry, particularly in developing countries, have made the automotive application of ferroelectric RAM crucial for the global industry.
On the other hand, the high production costs of ferroelectric RAM have limited their application to industries where units are usually needed in bulk and price is of little concern. While leading players in both the BFSI sector and the automotive industry can make liberal use of ferroelectric RAM, small players may find it harder to incorporate its inclusion into their operations.
The report examines the competitive landscape of the global ferroelectric RAM market by profiling leading players such as Fujitsu, IBM, Toshiba, Cypress Semiconductor, Infineon Technologies AG, Texas Instruments, and LAPIS Semiconductor.
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