Global and China Gallium Nitride High-electron-mobility Transistor Market Insights, Forecast to 2027

Global and China Gallium Nitride High-electron-mobility Transistor Market Insights, Forecast to 2027

  • QYResearch
  • November 2021
  • Semiconductors
  • 131 pages

Report Description

Gallium Nitride High-electron-mobility Transistor market is segmented by region (country), players, by Type, and by Application. Players, stakeholders, and other participants in the global Gallium Nitride High-electron-mobility Transistor market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on revenue and forecast by region (country), by Type and by Application in terms of revenue and forecast for the period 2016-2027.
For China market, this report focuses on the Gallium Nitride High-electron-mobility Transistor market size by players, by Type, and by Application, for the period 2016-2027. The key players include the global and local players which play important roles in China.

Segment by Type
100V
400V
600V
650V

Segment by Application
Consumer Electronics
Automotive
Medical Industry
Others

By Region
North America
United States
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
China Taiwan
Indonesia
Thailand
Malaysia
Latin America
Mexico
Brazil
Argentina
Colombia
Middle East & Africa
Turkey
Saudi Arabia
UAE

By Company
Nexperia
GaN Systems
Infineon Technologies
STMicroelectronics
TI
Renesas
ON Semiconductor
Fujitsu

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1 Study Coverage
1.1 Gallium Nitride High-electron-mobility Transistor Product Introduction
1.2 Market by Type
1.2.1 Global Gallium Nitride High-electron-mobility Transistor Market Size Growth Rate by Type
1.2.2 100V
List of Tables
Table 1. Global Gallium Nitride High-electron-mobility Transistor Market Size Growth Rate by Type, 2016 VS 2021 VS 2027 (US$ Million)
Table 2. Major Manufacturers of 100V
Table 3. Major Manufacturers of 400V
Table 4. Major Manufacturers of 600V
Table 5. Major Manufacturers of 650V

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