Gallium Arsenide (GaAs) Next Generation Semiconductors, Market Shares, Market Forecasts, Market Analysis, 2020-2026

Gallium Arsenide (GaAs) Next Generation Semiconductors, Market Shares, Market Forecasts, Market Analysis, 2020-2026

  • Winter Green Research
  • March 2020
  • Semiconductors
  • 212 pages

Report Description

The 2020 study has 212 pages, 116 tables and figures.   GaAs represents next generation semiconductors, a market that is $500 billion dollars in 2020.

Next generation GaAs semiconductors promise to bring a huge market, not totally replacing the existing semiconductor market, but ultimately making a huge dent in it. The ability to replace silicon semiconductors, a market that is $500 billion dollars in 2020 makes one sit up and take notice. The existing silicon semiconductor market is pretty good size for a market that barely existed in 1975.  Next generation GaAs support the signal speed that is needed to implement 5G.

GaAs works in a way that silicon cannot.  The potential for the next generation GaAs wafers is staggering, with the overall semiconductor market likely to surpass $20 trillion by 2026 as the new industrial revolution takes hold and 5G supports IoT that connects all things together.

Once economies of scale are realized these semiconductor GaAs markets are expected to really take off.  The sheer size of the global semiconductor market at $500 billion dollars in 2020 shows that the potential for a next generation semiconductor technology is truly exciting.  The gallium arsenide wafers are next generation technology because they operate faster than the silicon semiconductors, they support a new, faster network called 5G.

Gallium arsenide GaAs represents the next generation of semiconductor chips because the chips can do things that the silicon chips cannot do.   GaAs does have a considerably higher bandgap than silicon.   It is a direct band gap semiconductor with a zinc blende crystal structure.  

Sensing for autonomous and electric vehicles is one use of the technology.   3D Sensing for consumer electronics and use for lasers is common.  Units are used in radar and lasers.  The benefits of using GaAs in devices derive in part from the characteristic that GaAs generates less noise than most other types of semiconductor components.  As a result, it is useful in weak-signal amplification applications.  

Due to these benefits related to generating less noise, GaAs is a suitable replacement for silicon in the manufacture of linear and digital ICs.  A gallium arsenide wafer is also known as Gallium arsenide substrate.  Economies of scale for gallium arsenide promise to make the technology viable.

Silicon commercial advantage is that it is a thousand times cheaper to make.  As we move into the 5G era, that advantage will dissipate because of the volume of GaAs components that are made to meet demand permitting vendors to leverage economies of scale.  Gallium arsenide material technical advantages over silicon are that electrons race through its crystalline structure faster than they can move through silicon.  Cellphones, typically rely on speedy gallium arsenide chips to process the high-frequency radio signals that arrive faster than silicon can handle.

Unlike silicon cells, Gallium Arsenide cells are relatively insensitive to heat.  Alloys made from GaAs using Al, P, SB, or In have characteristics complementary to those of GaAs, allowing great flexibility.  GaAs is very resistant to radiation damage. This, along with its high efficiency, makes GaAs very desirable for space applications.  GaAs biggest drawback is the is the high cost of a single-crystal GaAs substrate which has been a barrier to volume manufacturing.

GaAs markets at $3.8 billion in 2020 promise to grow to $22 billion by 2026.  With the opportunity to participate in the 5G next generation semiconductor markets. Gallium arsenide components will achieve broad economies of scale, making them far more affordable and more available.  

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Companies Profiled
Market Leaders

  • Sumitomo Electric
  • II-VI Incorporated
  • IQE Corporation
  • Freiberger Compound Materials
  • AXT
  • China Crystal Technologies
  • Shenzhou Crystal Technology
  • Tianjin Jingming Electronic Materials
  • Yunnan Germanium
  • DOWA Electronics Materials

Market Participants

  • Advanced Wireless Semiconductor
  • Anadigics / GaAs Labs
  • Avago Technologies
  • BWT
  • Cree Billion Dollar Commitment to SiC Mosfets
  • Hanergy Holdings / AltaDevices
  • Hittite Microwave
  • M/A-COM Technology Solutions
  • Murata Manufacturing
  • Qorvo
  • RFMD
  • Skyworks Solutions
  • Tianjin Jingming Electronic Materials
  • Texas Instruments: LMG3410R050 GaN Device
  • TriQuint Semiconductor Inc
  • Yunnan Lincang Xinyuan Germanium Industry Co
  • Umicore
  • Vishay Gallium Arsenide LEDs
  • WIN Semiconductors

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Table of Contents

Abstract: Gallium Arsenide Semiconductors Indium Phosphide, Gallium Nitride
And Silicon Carbide Related Markets 1
Gallium Arsenide Semiconductors and Powders
Executive Summary 8
Economies of Scale for Gallium Arsenide 9

1. Gallium Arsenide Semiconductors: Market Description and Market Dynamics 11
1.1 Gallium Arsenide (GaAs) 11
1.1.1 Gallium Arsenide (GaAs) Advantages 11
1.1.2 Gallium Arsenide (GaAs) Overcomes Disadvantages 12
1.1.3 Working Electronic Circuits in a Gallium Arsenide Device 14
1.1.4 Gallium and Arsenic High-Pressure Synthesis of GaAs 14
1.2 Crystal Growth 15
1.2.1 VGF Crystal Growth Process 15
1.2.2 GaAs LEC Crystal Growth Process 17
1.2.3 Crystal Annealing 19
1.3 GaAs Crystal Analysis 20
1.4 Converting a GaAs Crystal Into Wafers - Mechanical Wafering 21
1.5 GaAs Sawing 22
1.6 Gallium Arsenide (GaAs) 25

2. Gallium Arsenide Semiconductors Market Shares and Forecasts 26
2.1 Gallium Arsenide Next Generation Semiconductors Market Driving Forces 26
2.1.1 Gallium Arsenide vs. Silicon Semiconductors 28
2.2 Gallium Arsenide Components and Powders Market Shares 28
2.3 Gallium Arsenide Components and Powders Market Forecasts, Units and Dollars 36
2.3.1 Gallium Arsenide GaAs Unit Analysis 39
2.4 Gallium Arsenide Semiconductor Market Segments 40
2.4.1 GaAs VGF vs GaAs LEC % Market Share 41
2.4.2 Gallium Arsenide (GaAs) in Cell Phones 42
2.4.3 Gallium Arsenide LEDs 43
2.5 Gallium Arsenide Semiconductor Regional Market Analysis 44

3. Gallium Arsenide, SIC, and InD Market Size by Sector 47
3.1 GaAs Wide Bandgap Material 47
3.2 GaAs Dollars - 3D Sensing for Autonomous And Electric Vehicles, 3D Sensing for Consumer Electronics, and More, Summary 47
3.3 3D Sensing for Autonomous And Electric Vehicles and 3D Sensing for Consumer Electronics, Units and Dollars 49
3.4 GaAs Units 51
3.5 GaAs, InP Segment Analysis Optical Infrastructure and Datacenters, Dollars,Units, and Percent, Worldwide, 2019 to 2022 52
3.6 GaAs and InP Segment Analysis 4G Remote Radioheads, 5G Beam Forming Antennae, 5G RF Electronics, Dollars, Worldwide, 2019 to 2022 55
3.9 SIC Segment Analysis Electric Vehicles, Smart Grid Power, Switching, Solar and Wind Energy, Dollars, Units, and Percent, Worldwide, 2019 to 2022, 61
3.6.1 Solar 62

4 Gallium Arsenide Next Generation Semiconductors Research and Technology 67
4.1 Silicon and GaAs Crystal Structure 67
4.1.1 GaAs and Other Compound Semiconductors Characteristics Comparison 68
4.2 Silicon and Gallium Arsenide Energy Band Structure 69
4.3 GaAs in Solar 74
4.4 Gallium arsenide (GaAs) Advantages over Silicon 75
4.5 CMOS Wideband Switches 76
4.6 SIC 78
4.6.1 Gallium Nitride 79
4.7 Bandgaps in Different Semiconductor Materials 79
4.7.1 Comparing GaAs, Si, SiC, and GaN Bandgaps 80
4.7.2 Gallium Nitride and Silicon Carbide 80
4.8 Gallium Nitride 82
4.9 Epitaxial Growth: Complex Series of Chemical Layers Grown on Top of Wafers84
4.10 GaAs Environmental Aspects 84

5 Gallium Arsenide Semiconductors Company Profiles 85
5.1 Advanced Wireless Semiconductor 85
5.2 Anadigics / GaAs Labs 85
5.3 Avago Technologies 85
5.4 AXT 86
5.4.1 AXT InP 89
5.4.2 AXT Ge 89
5.4.3 Semi-insulating GaAs 89
5.4.4 AXT Raw Materials 90
5.5 BWT 97
5.5.1 BWT Has Been Focusing On Fiber Pigtailed Diode Laser Packaging AndAssembly 98
5.5.2 BWT High Power, High Brightness, Fiber Coupled Diode Laser 103
5.6 China Crystal Technologies 103
5.6.1 China Crystal Technologies Revenue 111
5.7 Cree Billion Dollar Commitment to SiC Mosfets 113
5.8 DOWA Electronics Materials 114
5.9 Freiberger Compound Materials 118
5.9.1 GaAs Wafer Technologie - Freiberger Compound Materials 120
5.9.2 Freiberger High Pressure Synthesis of GaAs 121
5.9.3 Freiberger VGF Crystal Growth 122
5.9.4 Freiberger Crystal Annealing 123
5.9.5 Freiberger Electrical Properties of GaAs 124
5.9.6 Freiberger Mechanical Wafering 124
5.10 Hanergy Holdings / AltaDevices 126
5.10.1 Alta Devices Mass Production 128
5.10.2 Alta Devices Disrupting Traditional Solar Technologies 130
5.10.3 Alta Devices thin-film gallium arsenide solar technology 134
5.11 Hittite Microwave 135
5.12 IQE 135
5.12.1 ICE Geographical Revenue 137
5.12.2 ICE Sites and Technologies 138
5.13 M/A-COM Technology Solutions 139
5.14 Murata Manufacturing 139
5.15 Qorvo 140
5.16 RFMD 140
5.17 Shenzhou Crystal Technology 140
5.18 Skyworks Solutions 141
5.19 Sumitomo Electric 142
5.20 Tianjin Jingming Electronic Materials 143
5.21 Texas Instruments: LMG3410R050 GaN Device 143
5.22 TriQuint Semiconductor Inc 145
5.23 Yunnan Lincang Xinyuan Germanium Industry Co 145
5.24 Umicore 146
5.24.1 7.12.2 Umicore 146
5.25 Vishay Gallium Arsenide LEDs 152
5.26 WIN Semiconductors 152
5.27 II-VI 152
5.27.1 II-VI Finisar Acquisition 153
5.27.2 II-VI Reporting Segments 155
5.27.3 II-VI Incorporated 157
5.27.4 Finisar 158
5.27.5 II-VI Segment Revenue by End Markets for Full Year FY19 172
5.28 Selected Gallium Arsenide Market Participants 175
WinterGreen Research, 205
WinterGreen Research Methodology 205
WinterGreen Research Process 207
Market Research Study 207

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